Description
Transistor, N Channel FET.
Max voltage: 500V.
Max current: 50mA.
Dissipation: 350mW.
Package: TO-92 plastic, Cut and Formed leads.
P/N:
Derate >25 degC: 3.3mW / Deg C.
Please refer to specification sheet for gate source cutoff voltage.
ORIGINAL TOSHIBA PART
DATASHEET HERE
