Complementary silicon power transistors are designed for general−purpose switching and amplifier applications.Features•DC Current Gain − hFE = 20 −70 @ IC = 4 Adc•Collector−Emitter Saturation Voltage −VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc•Excellent Safe Operating Area•Complement to the NPN MJ3055
