The 2N6609 is a PowerBaset power transistor designed for high power audio, disk head positioners and other linear applications.
This device can also be used in power switching circuits such as relay orsolenoid drivers, DC−DC converters or inverters.
Features
• High Safe Operating Area (100% Tested) 150 W @ 100 V
• Completely Characterized for Linear Operation
• High DC Current Gain and Low Saturation VoltagehFE = 15 (Min) @ 8.0 A, 4.0 VVCE(sat) = 1.4 V (Max) @ IC = 8.0 A, IB = 0.8 A
• For Low Distortion Complementary Designs with 2N3773
