Description
Transistor, N Channel FET.
Max voltage: 50V.
Max current: 50mA.
Dissipation: 350mW.
Package: TO-92 plastic, Cut and Formed leads.
P/N: K30A.
Derate >25 degC: 3.3mW / Deg C.
Please refer to specification sheet for gate source cutoff voltage.
ORIGINAL TOSHIBA PART
DATASHEET HERE http://www.ecpe.nu.ac.th/ponpisut/2SK30A.pdf
